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 Übersetzung für 'n-type conduction' von Englisch nach Deutsch
electr.
n-type conduction [electron conduction]
n-Leitung {f} [Elektronenleitung]
Teiltreffer
electr.
p-type conduction [hole conduction]
p-Leitung {f} [Löcherleitung]
n type {adj}n-leitend
electr.
n-type semiconductor
Überschusshalbleiter {m} [n-Halbleiter]
electr.
n-type conductivity
n-Leitfähigkeit {f}
electr.
n-type semiconductor
n-Halbleiter {m}
electr.
n-type doping
n-Dotierung {f}
n-channel depletion typen-Kanal-Verarmungs­typ {m}
idiom
I don't know the name. <N.N., NN>
nomen nescio <N. N.>
electr.
useful signal + noise to noise <(S+N)/N> ratio
Verhältnis {n} von Nutzsignal plus Störgeräusch zum Störgeräusch <(S+N)/N>
ungeprüft
acad.libr.publ.
no place, no date {adv} <n.p., n.d.>
ohne Ort und Jahr <o. O. u. J.>
math.
set of natural numbers <ℕ, N>
Menge {f} der natürlichen Zahlen <ℕ, N>
chem.
amount of substance <n, N, mol>
Molzahl {f} <n, N, mol> [veraltet] [Stoffmenge]
chem.
amount of substance <n, N, mol>
Molmenge {f} <n, N, mol> [veraltet] [Stoffmenge]
electr.
n-channel / N-channel transistor
n-Kanal- / N-Kanal-Transistor {m}
not applicable {adj} <N/A, n/a, N.A., NA>entfällt [in Formularen]
acad.artpubl.
no place given <N.P., n.p.> [sine loco] [without place]
sine loco <s. l.> [veraltet] [ohne Ort]
acad.publ.
no date given {adv} <N.D., n.d.>
ohne Jahresangabe <o. J.>
acad.artpubl.
no place given {adv} <N.P., n.p.>
ohne Ortsangabe <o. O.>
not available {adj} <N/A, n/a>nicht erreichbar
no risk <N/R, n.r.>ohne Risiko
21 Übersetzungen
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Anwendungsbeispiele Englisch
  • While the conduction in an n- (p-) type doped semiconductor sets in at high temperatures because the conduction (valence) band is partially filled with electrons (holes) with the original band structure being unchanged, the situation is different in the case of the Mott transition where the band structure itself changes.
  • Following the end of forwarding conduction in a p–n type diode, a reverse current can flow for a short time.
  • According to the literature, design strategy of hole conductors is mainly p-type based and the issues on the sensitizing are accentuated on n-type electron accepting materials, which are usually of very low content in the blends and thus do not provide a complementary path for electron conduction.
  • If implemented in devices, these materials could provide a new type of control of conduction.
  • This has a maximum at the point where the voltage bias is such that the energy level of the p and n conduction bands are the same.

  • It occurs in a reverse biased p-n diode when the electric field enables tunneling of electrons from the valence to the conduction band of a semiconductor, leading to numerous free minority carriers which suddenly increase the reverse current.
  • It is the conduction channel that allows the electrons to flow from the source to the drain.
  • Ions which reach the detector lose some of their energy to inelastic scattering from the electrons, and some of these electrons gain enough energy to overcome the band gap between the semiconductor valence and conduction bands.
  • Surface conductivity may refer to the electrical conduction across a solid surface measured by surface probes.
  • Other types of polymers capable of ion conduction include polymeric ions, which incorporate either an oxidized (for anion transport) or reduced element of the polymer main chain through a process called chemical doping.

  • To allow conduction, semiconductors are doped with impurities which donate either mobile electrons or holes.
  • ... two dimensional electron systems) of polar semiconductors is strongly enhanced for incident laser frequencies at energy gaps where the direct optical interband transitions involve carrier-occupied states in either the conduction or valence band.
  • Delafossite compounds also have properties dealing with electric conductivity such as insulation and/or metallic conduction.
  • Operation is described using band-bending diagrams that show how the lowest conduction band energy and the highest valence band energy vary with position inside the diode under various bias conditions.
  • This is called subthreshold conduction. The primary source of leakage occurs inside transistors, but electrons can also leak between interconnects.

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