Übersetzung für 'tantalum layer' von Englisch nach Deutsch

tantalum layer

Tantalschicht {f}materialtech.

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layer of tantalum

Tantalschicht {f}materialtech.

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tantalum <Ta>

Tantal {n} <Ta>chem.

Tantalum {n} <Ta> [veraltet] [Tantal]chem.

tantalum implant

Tantalimplantat {n}dent.med.

tantalum fluoride

Tantalfluorid {n}chem.

tantalum oxide

Tantaloxid {n}chem.

tantalum instrument

Tantalinstrument {n}dent.med.

tantalum atom

Tantalatom {n}chem.

tantalum isotope

Tantalisotop {n} [auch: Tantal-Isotop]chem.

tantalum anode

Tantalanode {f}chem.electr.

tantalum capacitor

Tantalkondensator {m}electr.

electrolytic tantalum capacitor

Tantal-Elektrolytkondensator {m}electr.

wet tantalum capacitor

nasser Tantalkondensator {m}electr.

(electrolytic) tantalum capacitor

Tantal-Elko {m}electr.

tantalum carbide <TaC>

Tantalcarbid {n} <TaC>mineral.

tantalum hafnium carbide [Ta4HfC5]

Tantalhafniumcarbid {n}chem.

three-layer {adj} <3-layer> [attr.]

dreilagig <3-lagig>

thin-layer computed tomography <thin-layer CT>

Dünnschicht-Computertomografie {f} <Dünnschicht-CT>MedTech.

Dünnschicht-Computertomographie {f} <Dünnschicht-CT>MedTech.

to layer

überlagern

layer

Ableger {m} [Absenker]hort.

• It is used in on-chip metal-insulator-metal capacitors for high frequency CMOS integrated circuits. Tantalum oxide may have applications as the charge trapping layer for non-volatile memories.
• A film of tantalum was deposited by sputtering followed by a layer of gold by evaporation.
• The pattern is defined in a tantalum-based absorbing layer over the multilayer.
• thick layer of tantalum surrounding the CCD except where the light enters the system.
• Amorphous tantalum(V) oxide films can also be prepared by atomic layer deposition or by a pulsed chemical vapour deposition technique in which tantalum(V) ethoxide and tantalum(V) chloride are applied alternately.

• Solid electrolyte tantalum capacitors were invented by Bell Laboratories in the early 1950s as a miniaturized and more reliable low-voltage support capacitor to complement their newly invented transistor.
• Types with solid manganese dioxide electrolyte have served in the past as a "tantalum replacement".
• Recent efforts to improve the detection efficiency at near-infrared and mid-infrared wavelengths include studies of narrower (20 nm and 30 nm wide) NbN nanowires as well as extensive studies of alternative superconducting materials with lower superconducting critical temperatures than NbN (tungsten silicide, niobium silicide, molybdenum silicide and tantalum nitride).
• Another price explosion for tantalum in 2000/2001 forced the development of niobium electrolytic capacitors with manganese dioxide electrolyte, which have been available since 2002.