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 Übersetzung für 'base current' von Englisch nach Deutsch
electr.
base current
Basisstrom {m}
3 Wörter
electr.
base peak current
Basisspitzenstrom {m}
electr.
base saturation current
Basissättigungs­strom {m}
4 Wörter
electr.
collector-base cutoff current
Kollektor-Basis-Reststrom {m}
Teiltreffer
MedTech.phys.telecom.
radio frequency current <RF current>
Hochfrequenzstrom {m} <HF-Strom>
math.
base ten block <base 10 block> [multi-base arithmetic block]
Steckwürfel {m}
tech.
base
Standfuß {m}
15
math.
base
Grundzahl {f}
81
math.
base
Grundseite {f}
17
baseTrägermaterial {n}
base {adj}unecht [Geld]
15
base {adj}Grund-
51
baseZahlenbasis {f}
6
tech.
base
Untersatz {m}
9
baseSockel {m}
528
baseGrund {m} [- lage, - fläche, - bestandteil]
21
comp.MedTech.
base
Trägerplatte {f}
10
mil.
base
Stützpunkt {m}
155
constr.tech.
base
Unterbau {m}
11
chem.
base
Base {f}
61
baseZentrale {f}
11
base {adj}schlecht [minderwertig, niedrig, niederträchtig]
72
constr.tech.
base
Trägerschicht {f}
8
baseBoden {m} [von Gefäß, Tortenboden]
55
24 Übersetzungen
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Anwendungsbeispiele Englisch
  • Thus the transistor's base current (IB) forms the load current for the Zener diode and is much smaller than the current through "R"2.
  • The horizontal top load wire can increase radiated power by 2 to 4 times (3 to 6 dB) for a given base current.
  • In this region, Ic=βIb where Ic is collector current and Ib is base current, following linear relation y=mx.
  • At room temperature, JFET gate current (the reverse leakage of the gate-to-channel junction) is comparable to that of a MOSFET (which has insulating oxide between gate and channel), but much less than the base current of a bipolar junction transistor.
  • The reverse bias safe operating area (or RBSOA) is the SOA during the brief time before turning the device into the off state—during the short time when the base current bias is reversed.

  • The positive half of the applied signal will cause an increase in the value of VB this turn will increase the base current IB and cause a corresponding increase in emitter current IE and collector current IC.
  • This differential base current causes a change in the differential collector current in each leg by "i"in"h"fe.
  • FE; it is approximately the ratio of the DC collector current to the DC base current in forward-active region.
  • Bipolar transistors can be made to conduct by exposure to light because the absorption of photons in the base region generates a photocurrent that acts as a base current; the collector current is approximately β times the photocurrent.
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Enthält Übersetzungen von der TU Chemnitz sowie aus Mr Honey's Business Dictionary (nur Englisch/Deutsch).
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