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 Übersetzung für 'depletion region' von Englisch nach Deutsch
NOUN   a depletion region | depletion regions
electr.phys.
depletion region [semiconductor devices]
Raumladungs­zone {f} <RLZ>
phys.
depletion region [semiconductor devices]
Sperrschicht {f} [Raumladungs­zone]
phys.
depletion region [semiconductor devices]
Verarmungs­zone {f} [Raumladungs­zone]
Teiltreffer
electr.
depletion
Verarmung {f} [Halbleiter]
476
spec.
depletion
Abreicherung {f}
21
depletionAusdünnung {f}
22
depletionSchwund {m}
537
depletionRäumung {f}
24
depletionAuszehrung {f}
56
depletionLeerung {f}
23
depletionRaubbau {m}
109
depletionEntleerung {f}
67
med.
depletion
Depletion {f}
5
depletionErschöpfung {f}
1096
depletionWertminderung {f}
143
ecol.
depletion rate
Abbaurate {f}
med.
salt depletion
Salzverlust {m}
depletion [reduction]Abbau {m} [Verminderung]
2315
spec.
energy depletion
Energiedepletion {f}
ecol.econ.
resource depletion
Ressourcenverknappung {f}
electr.
depletion layer
Verarmungs­schicht {f}
ecol.econ.
resource depletion
Ressourcenerschöpfung {f}
nucl.
depletion factor
Abreicherungs­faktor {m}
23 Übersetzungen
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Anwendungsbeispiele Englisch
  • This region of uncovered positive and negative ions is called the depletion region due to the depletion of carriers in this region.
  • DLTS investigates defects present in a space charge (depletion) region of a simple electronic device.
  • As soon as the base voltage is allowed to rise, and current flows avalanche occurs and impact ionization in the collector base depletion region rapidly floods the base with carriers and turns the transistor fully on.
  • In a PIN diode the depletion region exists almost completely within the intrinsic region.
  • JFETs are sometimes referred to as depletion-mode devices, as they rely on the principle of a depletion region, which is devoid of majority charge carriers.

  • As the voltage at the gate increases, there will be a point at which the surface above the depletion region will be converted from p-type into n-type, as electrons from the bulk area will start to get attracted by the larger electric field.
  • In a rectifying Schottky barrier, the barrier is high enough that there is a depletion region in the semiconductor, near the interface.
  • Since the width of its non-conducting depletion region depends on the magnitude of the reverse bias voltage, this voltage can be used to control the junction capacitance.
  • Temperature triggering occurs when the width of depletion region decreases as the temperature is increased.
  • But first, enough electrons must be attracted near the gate to counter the dopant ions added to the body of the FET; this forms a region with no mobile carriers called a depletion region, and the voltage at which this occurs is the "threshold voltage" of the FET.

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