Übersetzung für 'n type doping' von Englisch nach Deutsch

n-type doping

n-Dotierung {f}electr.

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p-type doping

p-Dotierung {f}electr.

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n type {adj}

n-leitend

n-type semiconductor

n-Halbleiter {m}electr.

Überschusshalbleiter {m} [n-Halbleiter]electr.

n-type conductivity

n-Leitfähigkeit {f}electr.

n-channel depletion type

n-Kanal-Verarmungs­typ {m}

n-type conduction [electron conduction]

n-Leitung {f} [Elektronenleitung]electr.

useful signal + noise to noise <(S+N)/N> ratio

Verhältnis {n} von Nutzsignal plus Störgeräusch zum Störgeräusch <(S+N)/N>electr.

I don't know the name. <N.N., NN>

nomen nescio <N. N.>idiom

no place, no date {adv} <n.p., n.d.>

ungeprüft ohne Ort und Jahr <o. O. u. J.>acad.libr.publ.

amount of substance <n, N, mol>

Molzahl {f} <n, N, mol> [veraltet] [Stoffmenge]chem.

Molmenge {f} <n, N, mol> [veraltet] [Stoffmenge]chem.

set of natural numbers <ℕ, N>

Menge {f} der natürlichen Zahlen <ℕ, N>math.

n-channel / N-channel transistor

n-Kanal- / N-Kanal-Transistor {m}electr.

not applicable {adj} <N/A, n/a, N.A., NA>

entfällt [in Formularen]

no place given <N.P., n.p.> [sine loco] [without place]

sine loco <s. l.> [veraltet] [ohne Ort]acad.artpubl.

no place given {adv} <N.P., n.p.>

ohne Ortsangabe <o. O.>acad.artpubl.

no date given {adv} <N.D., n.d.>

ohne Jahresangabe <o. J.>acad.publ.

not available {adj} <N/A, n/a>

nicht verfügbar

no risk <N/R, n.r.>

ohne Risiko

• Oftentimes, a dopant is used, giving an excess of electrons (in so-called "n-type doping") or holes (in so-called "p-type doping") within the band structure.
• To increase the parasitic threshold voltage beyond the supply voltage, it was necessary to increase the N-type doping level in selected regions under the field oxide, and this was initially accomplished with the use of a so-called channel-stopper mask, and later with ion implantation.
• The material can be doped n-type doping with, for instance, halogen elements.
• A permanent positive change was found and is sometimes explained by enhanced N-type doping due to an increase in oxygen vacancies, which leads to a higher conductivity and charge extraction rate.
• for p- and n-type doping.

• By "abrupt" is meant that the p- and n-type doping exhibit a step function discontinuity at the plane where they encounter each other.
• Inducing n-type doping within silicene requires an alkali metal dopant.
• n-type doping produces mobile electrons (leaving behind positively charged donors) while p-type doping produces mobile holes (and negatively charged acceptors) In practice, p-n junctions of silicon solar cells are not made in this way, but rather by diffusing an n-type dopant into one side of a p-type wafer (or vice versa).
• When on the order of one dopant atom is added per 100 million atoms, the doping is said to be "low" or "light".