Übersetzung für 'p n junction' von Englisch nach Deutsch

p-n-junction

p-n-Übergang {m} [Halbleiter]electr.

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no place given <N.P., n.p.> [sine loco] [without place]

sine loco <s. l.> [veraltet] [ohne Ort]acad.artpubl.

Werbung

no place given {adv} <N.P., n.p.>

ohne Ortsangabe <o. O.>acad.artpubl.

no place, no date {adv} <n.p., n.d.>

ohne Ort und Jahr <o. O. u. J.; o. O. und J.>acad.libr.publ.

part number <P/N>

Teilekennzeichen {n} <Tkz, TKZ>mil.tech.

length between perpendiculars <p/p, p.p., pp, LPP, LBP, Length BPP>

Länge {f} zwischen den Loten <LzdL>naut.

part number <PN, P/N, part no.>

Sachnummer {f} <SN, Sach-Nr.>

pro re nata medication <PRN; p.r.n.>

Bedarfsmedikation {f}med.pharm.

as needed {adv} <p.r.n., PRN> [pro re nata]

bei Bedarfmed.pharm.

as the circumstances require {adv} <p.r.n., PRN> [pro re nata]

gegebenenfalls <ggf., ggfs., gfs.>med.

p-doped / n-doped semiconductor layer

p-dotierte / n-dotierte Halbleiterschicht {f}electr.

junction field effect transistor <junction FET, JFET, JUGFET>

Sperrschicht-Feldeffekttransistor {m} <Sperrschicht-FET, SFET>electr.

gastro-oesophageal junction <GE junction> [Br.]

ösophagogastraler Übergang {m} [Kardia]anat.med.

gastroesophageal junction <GE junction> [Am.]

ösophagogastraler Übergang {m} [Kardia]anat.med.

I don't know the name. <N.N., NN>

nomen nescio <N. N.>idiom

useful signal + noise to noise <(S+N)/N> ratio

Verhältnis {n} von Nutzsignal plus Störgeräusch zum Störgeräusch <(S+N)/N>electr.

partitioning and transmutation <P&T, P/T, PT, P-T>

Abtrennung und Umwandlungnucl.

set of natural numbers <ℕ, N>

Menge {f} der natürlichen Zahlen <ℕ, N>math.

amount of substance <n, N, mol>

Molmenge {f} <n, N, mol> [veraltet] [Stoffmenge]chem.

Molzahl {f} <n, N, mol> [veraltet] [Stoffmenge]chem.

price-to-book ratio <P/B ratio, P/BV>

Kurs-Buchwert-Verhältnis {n} <KBV>stocks

• Ion implantation was developed as a method of producing the p-n junction of photovoltaic devices in the late 1970s and early 1980s, along with the use of pulsed-electron beam for rapid annealing, although pulsed-electron beam for rapid annealing has not to date been used for commercial production.
• The monolithic integrated circuit chip was enabled by the inventions of the planar process by Jean Hoerni and p–n junction isolation by Kurt Lehovec.
• In electronics, a varicap diode, varactor diode, variable capacitance diode, variable reactance diode or tuning diode is a type of diode designed to exploit the voltage-dependent capacitance of a reverse-biased p–n junction.
• ... p–n junction) when a current is being driven, and be ill-defined at the interface itself.
• Some Zener diodes have a sharp, highly doped p–n junction with a low Zener voltage, in which case the reverse conduction occurs due to electron quantum tunnelling in the short space between p and n regions − this is known as the Zener effect, after Clarence Zener.

• This will cause the CCD to deplete, near the p–n junction and will collect and move the charge packets beneath the gates—and within the channels—of the device.
• Prior to recombination, electrons and holes may be separated either by doping the material to form a p-n junction (in semiconductor electroluminescent devices such as light-emitting diodes) or through excitation by impact of high-energy electrons accelerated by a strong electric field (as with the phosphors in electroluminescent displays).
• In every case the arrow head shows the polarity of the P–N junction formed between the channel and the gate.
• The process introduces an impure atom to the system, which creates the p–n junction.
• As field-effect transistors, they do not need a p–n junction, thus avoiding the p-type doping problem of ZnO.

• The current-voltage relationship is qualitatively the same as with a p-n junction, however the physical process is somewhat different.
• 21 GPa GaN can be doped with silicon (Si) or with oxygen p-n junction blue/UV-LEDs and room-temperature stimulated emission) because it lessens the effects of thermal generation of charge carriers that are inherent to any semiconductor.
• In particular, TRIAC always has a small current flowing directly from the gate to MT1 through the p-silicon without passing through the p-n junction between the base and the emitter of the equivalent NPN transistor.
• BJTs can be thought of as two diodes (P–N junctions) sharing a common region that minority carriers can move through.