Übersetzung für 'p type doping' von Englisch nach Deutsch

p-type doping

p-Dotierung {f}electr.

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n-type doping

n-Dotierung {f}electr.

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length between perpendiculars <p/p, p.p., pp, LPP, LBP, Length BPP>

Länge {f} zwischen den Loten <LzdL>naut.

p-type {adj}

p-leitendelectr.

p-type conductivity

p-Leitfähigkeit {f}electr.

p-type semiconductor

p-Halbleiter {m}electr.

p-type conduction [hole conduction]

p-Leitung {f} [Löcherleitung]electr.

partitioning and transmutation <P&T, P/T, PT, P-T>

Abtrennung und Umwandlungnucl.

price-to-book ratio <P/B ratio, P/BV>

Kurs-Buchwert-Verhältnis {n} <KBV>stocks

piping and instrumentation diagram <P&I diagram, P&ID>

Rohrleitungs­- und Instrumentenfließbild {n} <RI-Fließbild>tech.

purl [purl stitch] <p, P>

linke Masche {f} <li M>textil.

post-partum {adj} <pp., p.p.>

postpartalmed.

p-channel / P-channel transistor

p-Kanal- / P-Kanal-Transistor {m}electr.

postage and packing <P&P>

Porto und Verpackung

per pro / proc {prep} <p.p.>

per Prokura <pp., ppa.>

quantum placeat / placet {adv} <qu. p.; q. p.; QP> [as much as wanted]

nach Beliebenpharm.

so viel beliebtpharm.

present participle <ppr, ppr., p.pr.; pres-p> [abbrev. "pres-p" used in dict.cc]

Partizip {n} Präsens [Partizip I] <Part. Präs.; pres-p> [Abk. „pres-p“ in dict.cc verwendet]ling.

no place given <N.P., n.p.> [sine loco] [without place]

sine loco <s. l.> [veraltet] [ohne Ort]acad.artpubl.

per pro {adv} <p.p.>

im Auftrag <i. A., I. A.>

per pro {prep} <p.p.>

in Vertretung <i. V., I. V.>

• Oftentimes, a dopant is used, giving an excess of electrons (in so-called "n-type doping") or holes (in so-called "p-type doping") within the band structure.
• Vapor-based zinc diffusion is carried out at elevated temperatures (~450 °C) to allow for p-type doping.
• However, there are many difficulties to be overcome if such solar cells are to become a commercial reality: p-type doping of InN and indium-rich InGaN is one of the biggest challenges.
• In the late 1980's, Cunningham became the first researcher to demonstrate heavy p-type doping in a compound semiconductor (GaAs and InGaAs) using carbon impurities, including the first to utilize MOCVD epitaxial growth and a carbon halide gas source.
• As field-effect transistors, they do not need a p–n junction, thus avoiding the p-type doping problem of ZnO.

• n-type doping produces mobile electrons (leaving behind positively charged donors) while p-type doping produces mobile holes (and negatively charged acceptors) In practice, p-n junctions of silicon solar cells are not made in this way, but rather by diffusing an n-type dopant into one side of a p-type wafer (or vice versa).
• In the late 1980s, key breakthroughs in GaN epitaxial growth and p-type doping ushered in the modern era of GaN-based optoelectronic devices.
• Superconductivity in diamond was achieved through heavy p-type doping by boron such that the individual doping atoms started interacting and formed an "impurity band".
• When on the order of one dopant atom is added per 100 million atoms, the doping is said to be "low" or "light".