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 Übersetzung für 'semiconductor device' von Englisch nach Deutsch
NOUN   a semiconductor device | semiconductor devices
SYNO semiconductor | semiconductor device | semiconductor unit
electr.
semiconductor device
Halbleiterbaustein {m}
electr.
semiconductor device
Halbleiterbauelement {n}
3 Wörter
electr.
power semiconductor device
Leistungs­halbleiter {m}
Teiltreffer
electr.
semiconductor
Halbleiter {m}
550
semiconductor scaleStrukturgröße {f}
semiconductor technologyHalbleitertechnologie {f}
electr.
semiconductor wafer
Halbleiterplättchen {n}
phys.
semiconductor physics
Halbleiterphysik {f}
electr.
electronic semiconductor
Halbleiter {m}
electr.
semiconductor element
Halbleiterelement {n}
comp.electr.ind.
semiconductor industry
Halbleiterei {f} [Technikerjargon]
electr.
semiconductor laser
Halbleiterlaser {m}
electr.
semiconductor wafer
Halbleiterwafer {m}
electr.
semiconductor component
Halbleiterelement {n}
electr.
semiconductor material
Halbleiterwerkstoff {m}
electr.
semiconductor wafer
Halbleiterscheibe {f}
phys.
semiconductor region
Halbleiterzone {f}
electr.engin.phys.
semiconductor crystal
Halbleiterkristall {m}
chem.electr.
semiconductor compound
Halbleiterverbindung {f}
electr.
semiconductor electronics
Halbleiterelektronik {f}
electr.
intrinsic semiconductor
Eigenhalbleiter {m} [IEC 60050]
electr.
organic semiconductor
organischer Halbleiter {m}
electr.
semiconductor circuit
Halbleiterschaltkreis {m}
23 Übersetzungen
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Anwendungsbeispiele Englisch
  • Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research.
  • An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch.
  • A unijunction transistor (UJT) is a three-lead electronic semiconductor device with only one junction that acts exclusively as an electrically controlled switch.
  • This was enabled by advances in MOS semiconductor device fabrication, with MOSFET scaling reaching smaller micron and then sub-micron levels.
  • For microprocessor design, this description is then manufactured employing some of the various semiconductor device fabrication processes, resulting in a die which is bonded onto a chip carrier.

  • even when using exactly the same semiconductor device fabrication and so each transistor, contact, etc.
  • The thyristor is a solid-state semiconductor device similar to the diode, but with an extra control terminal that is used to switch the device on at a particular instant during the AC cycle.
  • Semiconductor implementations of crossbar switches typically consist of a set of input amplifiers or retimers connected to a series of interconnects within a semiconductor device.
  • The surface passivation process is an important method of semiconductor device fabrication that involves coating a silicon wafer with an insulating layer of silicon oxide so that electricity could reliably penetrate to the conducting silicon below.
  • Time domain reflectometry is used in semiconductor failure analysis as a non-destructive method for the location of defects in semiconductor device packages.

  • The PIN photodiode was invented by Jun-Ichi Nishizawa and his colleagues in 1950. It is a semiconductor device.
  • With the advances of digital electronics starting in the 1960s telephone switches employed semiconductor device components in increasing measure.
  • A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function.
  • A transistor is a semiconductor device used to amplify or switch electrical signals and power.
  • Solid-state relays control power circuits with no moving parts, instead using a semiconductor device to perform switching—often a silicon-controlled rectifier or triac.

  • Since the late 1980s, in usages such as the 32 nm and the 22 nm semiconductor node, it has also been used to describe typical feature sizes in successive generations of the ITRS Roadmap for miniaturized semiconductor device fabrication in the semiconductor industry.
  • Intel introduced a 1.5 μm process for CMOS semiconductor device fabrication in 1983. and then Hitachi, Mitsubishi Electric, NEC and Toshiba commercialized 500 [...] nm CMOS in 1989.
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