Translation for 'gallium arsenide' from English to Russian

gallium arsenide

арсенид {м} галлия [GaAs]хим.электр.

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indium arsenide

арсенид {м} индия [InAs]хим.электр.

gallium nitride

нитрид {м} галлия [GaN]хим.электр.

gallium phosphate

фосфат {м} галлия [GaPO4]хим.

gallium phosphide

фосфид {м} галлия [GaP]хим.электр.

gallium antimonide

антимонид {м} галлия [GaSb]хим.электр.

gallium <Ga>

галлий {м} <Ga>хим.

gallium(III) selenide

селенид {м} галлия(III) [Ga2Se3]хим.

gallium(III) bromide

бромид {м} галлия(III) [GaBr3]хим.

gallium(III) chloride

хлорид {м} галлия(III) [GaCl3]хим.

• Silicon-germanium is beginning to replace gallium arsenide (GaAs) in wireless communications devices.
• Gallium is predominantly used in electronics. Gallium arsenide, the primary chemical compound of gallium in electronics, is used in microwave circuits, high-speed switching circuits, and infrared circuits.
• Aluminium gallium arsenide (also gallium aluminium arsenide) (AlxGa1−xAs) is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap.
• Germanium or Indium gallium arsenide (InGaAs) detectors are commonly used.
• A significant minority are also now made from gallium arsenide, especially for very high speed applications (see HBT, below).

• Because silicon dioxide is a native oxide of silicon it is more widely used compared to other semiconductors like gallium arsenide or indium phosphide.
• While silicon is the prevalent material for wafers used in the electronics industry, other compound III-V or II-VI materials have also been employed. Gallium arsenide (GaAs), a III-V semiconductor produced via the Czochralski method, gallium nitride (GaN) and silicon carbide (SiC) are also common wafer materials, with GaN and sapphire being extensively used in LED manufacturing.
• Arsenic is used as the group 5 element in the III-V semiconductors gallium arsenide, indium arsenide, and aluminium arsenide.
• A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function.
• One proposed material is indium gallium arsenide, or InGaAs.

• Silicon (Si) types currently predominate but certain advanced microwave and high-performance versions now employ the "compound semiconductor" material gallium arsenide (GaAs) and the "semiconductor alloy" silicon-germanium (SiGe).
• In order to provide the tenfold increase in performance that he always demanded of his newest machines, Cray decided that the machine would have to be built using gallium arsenide semiconductors.
• Photons hitting a thin film of alkali metal or semiconductor material such as gallium arsenide in an image intensifier tube cause the ejection of photoelectrons due to the photoelectric effect.
• Non-oxide ferromagnetic semiconductor sources (like manganese-doped gallium arsenide [...]), increase the interface resistance with a tunnel barrier, or using hot-electron injection.